Deep‐level changes associated with the degradation of gallium phosphide red‐light‐emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323237
Reference15 articles.
1. Defect structure introduced during operation of heterojunction GaAs lasers
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4. Bulk degradation of GaP red LEDs
5. Direct Evidence for Generation of Defect Centers during Forward‐Bias Degradation of GaAs1−xPxElectroluminescent Diodes
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