Annealing Studies of Defects Pertinent to Radiation Damage in Si:B
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. A bistable defect in electron-irradiated boron-doped silicon
2. Electron irradiation—induced defects inp-type silicon at 80 K
3. Room-temperature irradiation of p-type Silicon
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
5. Carbon interstitial in electron-irradiated silicon
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