Room-temperature irradiation of p-type Silicon-Reference-Cited by-同舟云学术

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Room-temperature irradiation of p-type Silicon

Published:1985-12-16 Issue:2 Volume:92 Page:609-614
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Londos C. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

2. , and , Ann. Rev. Mater. Sci., 377 (1977).

3. Carbon interstitial in electron-irradiated silicon

4. and , in: Irradiation Effects in Semiconductors, Ed. and , Gordon & Breach, New York 1971 (p. 161).

5. Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

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3. Substitutional carbon-dioxygen center in irradiated silicon;Materials Science in Semiconductor Processing;2021-06

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