Electron irradiation—induced defects inp-type silicon at 80 K
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference13 articles.
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1. Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation;Semiconductor Science and Technology;2023-12-29
2. Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC;Journal of Physics D: Applied Physics;2012-10-16
3. Carbon-related radiation damage centres and processes in p-type Si;Semiconductor Science and Technology;1990-07-01
4. Effect of oxygen on the migration of the carbon interstitial defect in silicon;Physical Review B;1988-03-15
5. Annealing Studies of Defects Pertinent to Radiation Damage in Si:B;Physica Status Solidi (a);1987-08-16
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