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Dose rate effects on the dynamic annealing mechanism in P+ -implanted silicon

  • Published:1986-09-16 Issue:1 Volume:97 Page:77-85
  • ISSN:0031-8965
  • Container-title:physica status solidi (a)
  • language:de
  • Short-container-title:phys. stat. sol. (a)

Author:

Berti M.,Drigo A. V.,Lulli G.,Merli P. G.,Antisari3 M. Vittori

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer;Defence Science Journal;2009-07-27

2. Impact of fluence-rate related effects on the sputtering of silicon at elevated target temperatures;Journal of Applied Physics;2009-02-15

3. MeV heavy ion induced recrystallization of buried silicon nitride layer: Role of energy loss processes;Journal of Applied Physics;2007-02

4. Role of electronic and nuclear energy losses in swift heavy ion beam induced epitaxial crystallization of a buried Si3N4 layer;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-04

5. MeV heavy ion beam induced epitaxial crystallization of buried Si3N4 layer;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-03
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