Role of electronic and nuclear energy losses in swift heavy ion beam induced epitaxial crystallization of a buried Si3N4 layer
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference22 articles.
1. Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon
2. Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire
3. Channeling dependence of ion‐beam‐induced epitaxial recrystallization in silicon
4. Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation
5. Evidence of enhanced epitaxial crystallization at low temperature by inelastic electronic scattering of mega-electron-volt heavy-ion-beam irradiation
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1. Physical and biological properties of the ion beam irradiated PMMA-based composite films;Applied Surface Science;2015-02
2. Materials Engineering with Swift Heavy Ions;Swift Heavy Ions for Materials Engineering and Nanostructuring;2011
3. Studies on Carbon Nanotubes and Fullerenes Under Extreme Conditions;Journal of Nanoscience and Nanotechnology;2010-06-01
4. Modification and Characterisation of Materials by Swift Heavy Ions;Defence Science Journal;2009-07-27
5. Accelerator-Based Materials Science Research Activities at IUAC Delhi;Nuclear Physics News;2008-03-21
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