The Role of Dopant and Segregation Annealing in Silicon p–n Junction Gettering-Reference-Cited by-同舟云学术

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The Role of Dopant and Segregation Annealing in Silicon p–n Junction Gettering

Published:1987-10-16 Issue:2 Volume:103 Page:643-654
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Cerofolini G. F.,Polignano M. L.,Bender H.,Claeys C.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Gold solubility in silicon and gettering by phosphorus

2. Simultaneous gettering of Au in silicon by phosphorus and dislocations

3. The role of point-like and extended defects in MOS processing

4. Heavy Metal Gettering in Silicon‐Device Processing

5. and , Semiconductor Silicon 1981. Ed. , and , The Electrochem. Soc., Princeton, N. J., 1981 (p. 724).

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5. Gettering in Silicon;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

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