Simultaneous gettering of Au in silicon by phosphorus and dislocations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90371
Reference5 articles.
1. Preliminary Results of an Ion Scattering Study of Phosphosilicate Glass Gettering
2. Dislocation networks in phosphorus-implanted silicon
3. On the nature of the kink in the carrier profile for phosphorus‐diffused layers in silicon
4. Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92,
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