Radiation Damage and Its Annealing Behaviour in InP after Recoil Implantation of118Sb and111In Observed by TDPAC-Reference-Cited by-同舟云学术

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Radiation Damage and Its Annealing Behaviour in InP after Recoil Implantation of118Sb and111In Observed by TDPAC

Published:1984-10-16 Issue:2 Volume:85 Page:455-461
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Schneider F.,Unterricker S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Radiogenic Sn defects in ion implanted InP

2. Die magnetischen Momente der 5?-Niveaus von Sn118 und Sn120

3. and , in: Perturbed Angular Correlations, Ed. , and , North-Holland Publ. Co., Amsterdam 1964. (p. 19).

4. Dissertation A, Bergakademie Freiberg 1983.

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3. PAC investigation of implanted semiconductors;Hyperfine Interactions;1990-08

4. Investigation of Implanted Semiconductors by Nuclear Spectroscopie Methods;Isotopenpraxis Isotopes in Environmental and Health Studies;1989-01

5. Direct and Recoil Implantation, and Collisional Ion-Beam Mixing: Recent Low-Temperature Experiments;Materials Modification by High-fluence Ion Beams;1989

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