Investigation of Implanted Semiconductors by Nuclear Spectroscopie Methods
Author:
Affiliation:
1. a Bergakademie Freiberg, Sektion Physik , Bernhard-von-Cotta-Str. 4, DDR-9200, Freiberg
2. b Akademie der Wissenschaften der DDR, Forschungsinstitut für Aufbereitung , Str. des Friedens 40, DDR-9200, Freiberg
Publisher
Informa UK Limited
Subject
General Medicine
Link
https://www.tandfonline.com/doi/pdf/10.1080/10256018908624108
Reference31 articles.
1. M�ssbauer study of119Sn defects in silicon from ion implantations of radioactive119In
2. Radiation defects in ion-implanted silicon. I. Mössbauer spectroscopy ofSn119defect structures from implantations of radioactive antimony
3. Radiation defects in ion-implanted silicon. II. Mössbauer spectroscopy ofSn119defect structures from implantations of radioactive tellurium
4. Sn impurity defects in germanium from ion implantations of radioactive 119In
5. Site-Selective Doping of Compound Semiconductors by Ion Implantation of Radioactive Nuclei
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1. Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling;Hyperfine Interactions;1994-12
2. Emission channeling and blocking;Physics Reports;1991-03
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