Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling-Reference-Cited by-同舟云学术

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Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling

Published:1994-12 Issue:1 Volume:84 Page:27-41
ISSN:0304-3834
Container-title:Hyperfine Interactions
language:en
Short-container-title:Hyperfine Interact

Author:

Hofsäss H.,Wahl U.,Jahn S. G.

Publisher

Springer Science and Business Media LLC

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/BF02060641.pdf

Reference26 articles.

1. L.C. Feldman, J.W. Mayer and S.T. Picraux,Materials Analysis by Ion Channeling (Academic Press, New York, 1982).

2. D.V. Morgan (ed.),Channeling (Wiley, London, 1973).

3. J.W. Mayer, in:Channeling, see ref. [2](, p. 453.

4. H. Hofsäss and G. Lindner, Phys. Rep. 210(1991)121.

5. E. Uggerhøj, Phys. Lett. 22(1966)382.

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