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Dynamic quadrupole interactions in semiconductors

Published:2018-04-28 Issue:16 Volume:123 Page:165109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dang Thien Thanh¹^ORCID,Schell Juliana²³,Lupascu Doru C.³,Vianden Reiner¹

Affiliation:

1. Helmholtz-Institut für Strahlen- und Kernphysik, University of Bonn, Bonn, Germany

2. European Organization for Nuclear Research (CERN), CH-1211 Geneva, Switzerland

3. Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 45141 Essen, Germany

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Bundesministerium für Bildung und Forschung

Deutscher Akademischer Austauschdienst

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4993714

Reference40 articles.

1. Detection of electronic perturbations in silicon after EC decay of 111In observed by PAC

2. Temperature dependence of the hyperfine interactions ofCd111in silicon

3. Temperature dependence of the hyperfine interactions ofCd111in germanium

4. Time-differential perturbed-angular-correlation study of−111111Cd in III-V compounds

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1. The Local Exploration of Magnetic Field Effects in Semiconductors;Crystals;2022-04-16

2. Thermal annealing effects in polycrystalline EuTiO3 and Eu2Ti2O7;AIP Advances;2019-12-01

3. TDPAC Studies of Local Defects and Phenomena in Ferroics and Multiferroics;Crystals;2019-11-22

4. Hyperfine interactions and diffusion of Cd in TiO 2 (rutile);Journal of Applied Physics;2019-07-07

5. Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (111In → )111Cd-Doped SnO2 Semiconductor: Ab Initio Modeling of the Electron-Capture-Decay After-Effects Phenomenon;The Journal of Physical Chemistry C;2018-07-03

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