Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (111In → )111Cd-Doped SnO2 Semiconductor: Ab Initio Modeling of the Electron-Capture-Decay After-Effects Phenomenon-Reference-Cited by-同舟云学术

Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (111In → )111Cd-Doped SnO2 Semiconductor: Ab Initio Modeling of the Electron-Capture-Decay After-Effects Phenomenon

Published:2018-07-03 Issue:30 Volume:122 Page:17423-17436
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Darriba Germán N.¹,Muñoz Emiliano L.²,Carbonari Artur W.³^ORCID,Rentería Mario¹^ORCID

Affiliation:

1. Departamento de Física and Instituto de Física La Plata (IFLP, CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina

2. Facultad de Ingeniería, Universidad Nacional de La Plata, 1900 La Plata, Argentina

3. Instituto de Pesquisas Energéticas e Nucleares-IPEN/CNEN, Universidade de São Paulo, São Paulo, SP, Brazil

Funder

Consejo Nacional de Investigaciones Cient?ficas y T?cnicas

Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico

Funda??o de Amparo ? Pesquisa do Estado de S?o Paulo

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b03724