Radiogenic Sn defects in ion implanted InP
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/14/i=7/a=005/pdf
Reference18 articles.
1. Beryllium‐ion implantation in InP and In1−xGaxAsyP1−y
2. Ion‐implantedn‐ andp‐type layers in InP
3. Mossbauer study of Sn impurity defect structures in GaAs
4. Radiation defects in ion-implanted silicon. II. Mössbauer spectroscopy ofSn119defect structures from implantations of radioactive tellurium
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mossbauer spectroscopy at ISOLDE;Hyperfine Interactions;2000
2. Stoichiometrically Dependent Deep Levels in Sn‐Doped n‐Type InP;Journal of The Electrochemical Society;1999-03-01
3. Defect recovery of ion implanted InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03
4. Lattice location and electrical activity of ion‐implanted Sn in InP;Applied Physics Letters;1993-04-19
5. M�ssbauer study of defects created by low-fluence In+ implantations in InP;Hyperfine Interactions;1993
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