Beryllium‐ion implantation in InP and In1−xGaxAsyP1−y
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90573
Reference8 articles.
1. Ion‐implantedn‐ andp‐type layers in InP
2. N-type doping of indium phosphide by implantation
3. Sperrfreie kontakte an indiumphosphid
4. Uniform‐carrier‐concentrationp‐type layers in GaAs produced by beryllium ion implantation
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1. Processing of compound semiconductors;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
2. Analysis of Be doping of InGaP lattice matched to GaAs;Journal of Crystal Growth;2000-01
3. Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere;Physical Review B;1999-01-15
4. Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p(+)n InP junctions;Journal of Materials Science: Materials in Electronics;1999
5. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted n InP junctions;Semiconductor Science and Technology;1998-04-01
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