Analysis of Be doping of InGaP lattice matched to GaAs-Reference-Cited by-同舟云学术

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Analysis of Be doping of InGaP lattice matched to GaAs

Published:2000-01 Issue:1-4 Volume:208 Page:65-72
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bettini J,de Carvalho M.M.G,Cotta M.A,Pudenzi M.A.A,Frateschi N.C,Silva Filho A,Cardoso L.P,Landers R

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. Plasma and wet chemical etching of In0.5Ga0.5P

2. Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition

3. Electrical and optical properties of high purity In0.5Ga0.5P grown on GaAs by liquid phase epitaxy

4. AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence investigation of Be-doped Npn AlGaAs/GaAs heterojunction bipolar transistor structures;Physica E: Low-dimensional Systems and Nanostructures;2005-12

2. Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy;Journal of Crystal Growth;2004-06

3. Electrical isolation of InGaP by proton and helium ion irradiation;Journal of Applied Physics;2002-10-15

4. Laser reflectometry in situ monitoring structural and growth effects on the electron cyclotron resonance etching of In[sub 0.49]Ga[sub 0.51]P layers in Al-free laser structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001

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