Electrical isolation of InGaP by proton and helium ion irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1506200
Reference14 articles.
1. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
2. Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm
3. Ion implantation for isolation of III-V semiconductors
4. Ion implantation doping and isolation of In0.5Ga0.5P
5. Boron Implantation intoGaAs/Ga0.5In0.5PHeterostructures
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3. Performance degradation of InGaP solar cells due to 70 keV electron irradiation;Japanese Journal of Applied Physics;2017-07-25
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