Uniform‐carrier‐concentrationp‐type layers in GaAs produced by beryllium ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88644
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1. Low‐loss GaAsp+n−n+three‐dimensional optical waveguides
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4. Silicon‐ and selenium‐ion‐implanted GaAs reproducibly annealed at temperatures up to 950 °C
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