Stoichiometrically Dependent Deep Levels in Sn‐Doped n‐Type InP-Reference-Cited by-同舟云学术

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Stoichiometrically Dependent Deep Levels in Sn‐Doped n‐Type InP

Published:1999-03-01 Issue:3 Volume:146 Page:1163-1166
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Nishizawa Jun‐ichi¹²,Kim Kiyoon³,Oyama Yutaka³¹²,Suto Ken³¹²

Affiliation:

1. Semiconductor Research Institute of Semiconductor Research Foundation, Sendai 980-0862, Japan

2. Telecommunication Advancements Organization of Japan, Sendai Research Center, Sendai 980-0868, Japan

3. Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1391739/pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep Level in InP Crystal Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure;Japanese Journal of Applied Physics;2000-07-15

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