Immiscibility in In1−xGax P1−y Asy Lattice Matched to GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Inst. Phys. C;De Cremoux,1980
2. Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation
3. InxGa1−xAsyP1−yalloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy
4. Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−ylayers lattice matched to InP substrates
5. High mobility in liquid phase epitaxial InGaAsP free of composition modulations
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MOCVD GaInAsP/GaInP/AlGaInP laser structures emitting at 780 nm;Semiconductors;2003-12
2. Epitaxial deposition of InGaAsP solid solutions in the miscibility gap;Semiconductors;2000-11
3. Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaPxAs1-x(x=0, 0.2, 0.4) Substrates;Japanese Journal of Applied Physics;1990-11-20
4. Phase diagram and LPE growth of quaternary InGaAsP on GaAs;Journal of Crystal Growth;1987-04
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