Epitaxial deposition of InGaAsP solid solutions in the miscibility gap-Reference-Cited by-同舟云学术

Epitaxial deposition of InGaAsP solid solutions in the miscibility gap

Published:2000-11 Issue:11 Volume:34 Page:1255-1258
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vavilova L. S.,Kapitonov V. A.,Murashova A. V.,Tarasov I. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1325418.pdf

Reference15 articles.

1. B. de Cremoux, J. Phys. (Paris) 43(C5), 19 (1982).

2. K. Onabe, Jpn. J. Appl. Phys. 21, L323 (1982).

3. G. B. Stringfellow, J. Cryst. Growth 65, 454 (1983).

4. A. G. Khachaturyan, Theory of Structural Transformations in Solids (Wiley, New York, 1983).

5. I. P. Ipatova, V. G. Malyshkin, A. Yu. Maslov, and V. A. Shchukin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 27(2), 285 (1993) [Semiconductors 27, 158 (1993)].

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