InxGa1−xAsyP1−yalloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93078
Reference6 articles.
1. Liquid phase epitaxial In1−xGaxAsyP1−ylattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm
2. Composition dependence of the band gaps of In1−xGaxAs1−yPyquaternary solids lattice matched on InP substrates
3. Calculation of ternary and quaternary III–V phase diagrams
4. Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As
5. The crystallization path: A way to the GaxIn1-xAsyP1-yphase diagram
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2. Effect of high temperature rapid thermal annealing on optical properties of InGaAsP grown by molecular beam epitaxy;Optical Materials Express;2017-10-03
3. Liquid Phase Epitaxy;Reference Module in Materials Science and Materials Engineering;2016
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