High mobility in liquid phase epitaxial InGaAsP free of composition modulations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93775
Reference9 articles.
1. InxGa1−xAsyP1−yalloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy
2. Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation
3. Miscibility gaps in quaternary III/V alloys
4. Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−ylayers lattice matched to InP substrates
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1. "The resonance between the mixing energy and the elastic strain energy as the reason for the composition modulation effect appearance during the spinodal decomposition of GaInPAs solid solutions ";Kovove Materialy-Metallic Materials;2023-04-24
2. Composition modulation in the GaxIni-xPyAs1-y - InP heterostructure during spinodal decomposition under the conditions of internal energy resonance;Journal of Physics: Conference Series;2021-11-01
3. The composition modulation effect in GaInPAs solid solutions as a manifestation of energy resonance after material's spinodal decomposition;Journal of Physical Studies;2021
4. Modulated Contrast and Associated Diffracted Intensity of GaPySb1-y Layers Grown Using Organometallic Vapor Phase Epitaxy;Journal of the Korean Physical Society;2008-02-15
5. Raman scattering studies of Te doped In0.14Ga0.86As0.13Sb0.87 alloys grown on GaSb by liquid phase epitaxy;Journal of Applied Physics;2006-12-15
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