DX-like centers in Al0.5Ga0.5As0.05Sb0.95-Reference-Cited by-同舟云学术

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DX-like centers in Al0.5Ga0.5As0.05Sb0.95

Published:1992-05-16 Issue:1 Volume:131 Page:K37-K41
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Polyakov A. Y.,Stam M.,Milnes A. G.,Bochkarev A. E.,Pearton S. J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. , and , Extended Abstr. 19th Conf. on Solid State Devices and Materials, Tokyo 1987 (p. 127).

2. , and , Proc. 14th Internat. Symp. GaAs and Related Compounds, Las Vegas (Nevada) 1986,

3. Deep levels in Te‐doped AlSb grown by molecular beam epitaxy

4. Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. DXcenter in AlGaAsSb:Te and a mechanism of its ionization;Journal of Applied Physics;1996-03

2. Gallium antimonide device related properties;Solid-State Electronics;1993-06

3. gallium aluminum arsenide antimonide (Ga(x)Al(1-x)As(y)Sb(1-y)), deep defects;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.

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