Deep levels in Te‐doped AlSb grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103350
Reference16 articles.
1. Electrical properties and band offsets of InAs/AlSbn‐Nisotype heterojunctions grown on GaAs
2. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
3. IIA-7 an AlSb/InAs/AlSb quantum well HFT
4. Electron transport in an AlSb/InAs/GaSb tunnel emitter hot‐electron transistor
5. Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures
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3. Reduction of hetero-interface resistivity in n-type AlAsSb/GaSb distributed Bragg reflectors;Semiconductor Science and Technology;2008-01-25
4. Spectra of Persistent Photoconductivity in InAs∕AlSb Quantum-Well Heterostructures;Semiconductors;2005
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