Access time analysis of dynamic MOS RAM-Reference-Cited by-同舟云学术

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Access time analysis of dynamic MOS RAM

Published:1983 Issue:5 Volume:66 Page:107-116
ISSN:8756-6621
Container-title:Electronics and Communications in Japan (Part I: Communications)
language:en
Short-container-title:Electron. commun. Jpn.

Author:

Nagayama Yasuji,Works Kitaitami,Mashiko Koichiro,Yoshihara Tsutomu,Nakano Takao

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications

Reference8 articles.

1. S. Matsue, H. Yamamoto, K. Kobayashi, T. Wada, M. Tameda, T. Okuda, and Y. Inagaki. A 256K dynamic RAM, ISSCC Dig. Tech. Papers, pp. 232-233 (1980).

2. T. Mano, K. Takeya, T. Watanabe, K. Kiuchi, T. Ogawa, and K. Hirata. A 256K RAM fabricated with molybdenum-polysilicon technology. ISSCC Dig. Tech. Papers, pp. 234-235 (1980).

3. Simohigashi. Access Time Analysis of MOS Memory. 1981 I.E.C.E. Conference Record, 400.

4. K. Itoh, R. Ron, H. Masuda, and Y. Kamigaki. A single 5V 64K dynamic RAM. ISSCC Dig. Tech. Papers, pp. 228-229 (1980).

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