An accurate parasitic parameters extraction method based on FW-EM for AlGaN/GaN HEMT up to 110 GHz-Reference-Cited by-同舟云学术

An accurate parasitic parameters extraction method based on FW-EM for AlGaN/GaN HEMT up to 110 GHz

Published:2017-07-11 Issue:1 Volume:31 Page:e2270
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Jia Yonghao¹^ORCID,Xu Yuehang¹,Xu Ruimin¹,Li Yanrong¹

Affiliation:

1. School of Electronic Engineering; University of Electronic Science and Technology of China; Chengdu China

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Ministry of Science and Technology

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference19 articles.

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