Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7511996/7538225/07540047.pdf?arnumber=7540047
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. First Demonstration of an N-Polar InAlGaN/GaN HEMT;IEEE Electron Device Letters;2024-03
2. First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-06
3. Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands;IEEE Transactions on Microwave Theory and Techniques;2023-05
4. Effects of Electrodes Layout on Performance of Millimeter-Wave Transistors;IEEE Access;2023
5. Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs;IEEE Transactions on Electron Devices;2022-12
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