A parameter extraction method for GaN HEMT empirical large-signal model including self-heating and trapping effects-Reference-Cited by-同舟云学术

A parameter extraction method for GaN HEMT empirical large-signal model including self-heating and trapping effects

Published:2015-12-21 Issue:1 Volume:30 Page:e2137
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Wen Zhang¹,Xu Yuehang¹²,Wang Changsi¹,Zhao Xiaodong¹,Chen Zhikai¹,Xu Ruimin¹

Affiliation:

1. School of Electronic Engineering; University of Electronic Science and Technology of China; Chengdu 611731 China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices; University of Electronic Science and Technology of China; Chengdu 611731 China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference19 articles.

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2. A wideband and compact GaN MMIC Doherty amplifier for microwave link applications;Gustafsson;IEEE Trans Microw Theory Techn,2013

3. Compact hybrid broadband GaN HEMT power amplifier based on feed-back technique;Qiu;Electron Lett,2013

4. A compact 16 watt X-band GaN MMIC power amplifier;Klockenhoff;IEEE MTT-S Digest,2006

5. A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion;Mari;Microelectron Reliab,2011

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