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An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects

  • Published:2014-12 Issue:12 Volume:62 Page:2878-2887
  • ISSN:0018-9480
  • Container-title:IEEE Transactions on Microwave Theory and Techniques
  • language:
  • Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Wang Changsi,Xu Yuehang,Yu Xuming,Ren Chunjiang,Wang Zhensheng,Lu Haiyan,Chen Tangsheng,Zhang Bin,Xu Ruimin

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 87 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Transconductance-Based Extraction Method for Thermal Resistance in GaN HEMTs;IEEE Transactions on Electron Devices;2024-02

2. A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution;IEEE Transactions on Power Electronics;2024-01

3. GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition;2023 16th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS);2023-10-25

4. Gate Geometry-Dependent Thermal Impedance of Depletion Mode HEMTs;IEEE Transactions on Electron Devices;2023-10

5. A Scalable Knowledge-Based Neural Network Model for GaN HEMTs With Accurate Trapping and Self-Heating Effects Characterization;IEEE Transactions on Microwave Theory and Techniques;2023-09
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