Affiliation:
1. Advanced Technology Development Centre; Indian Institute of Technology; Kharagpur West Bengal 721302 India
2. Department of Electronics & Electrical Communication Engineering; Indian Institute of Technology; Kharagpur West Bengal 721302 India
Funder
Ministry of Human Resources Development
Department of Electronics and Information Technology, Ministry of Communications and Information Technology
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. I. Angelov V. Desmaris K. Dynefors P.Å. Nilsson N. Rorsman H. Zirath 2005 309 312
2. Analytical method for deriving consistent large-small-signal field-effect transistor model;Bousnina;Microwave Opt Technol Lett,2013
3. Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects;Crupi;Microwave Opt Technol Lett,2011
4. An improved empirical large-signal model for the GaAs- and GaN-based HEMTs;Liu;Int J RF Microwave Comput Aid Eng,2011
5. T. Oishi H. Otsuka K. Yamanaka A. Inoue Y. Hirano I. Angelov 2010 20 23
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献