Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study-Reference-Cited by-同舟云学术

Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study

Published:2020-10 Issue:7 Volume:14 Page:1018-1025
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Panda Deepak Kumar¹^ORCID,Singh Rajan²,Lenka Trupti Ranjan²^ORCID,Pham Thi Tan³,Velpula Ravi Teja⁴^ORCID,Jain Barsha⁴,Bui Ha Quoc Thang⁴,Nguyen Hieu Pham Trung⁴

Affiliation:

1. School of ElectronicsVIT‐AP UniversityAmaravatiAP522237India

2. Microelectronics and VLSI Design Group, Department of Electronics & Communication EngineeringNational Institute of Technology SilcharCacharAssam788010India

3. Ho Chi Minh City University of Technology, Vietnam National University Ho Chi Minh City268 Ly Thuong Kiet, Ward 14, District 10Ho Chi Minh City700000Vietnam

4. Department of Electrical and Computer EngineeringNew Jersey Institute of TechnologyNewarkNJ07102USA

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2020.0015

Reference35 articles.

1. Compact thermal noise model for enhancement mode N‐polar GaN MOS‐HEMT including 2DEG density solution with two sub‐bands

2. Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

3. A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

4. Highly linear dual capacitive feedback LNA for L‐band atmospheric radars;Murthy B.T.V.;J. Electromagn. Waves Appl.,2016

5. GaN HEMT Noise Model Based on Electromagnetic Simulations

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