Compact thermal noise model for enhancement mode N‐polar GaN MOS‐HEMT including 2DEG density solution with two sub‐bands-Reference-Cited by-同舟云学术

Compact thermal noise model for enhancement mode N‐polar GaN MOS‐HEMT including 2DEG density solution with two sub‐bands

Published:2018-04-25 Issue:6 Volume:12 Page:810-816
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Panda Deepak Kumar¹,Lenka Trupti Ranjan¹^ORCID

Affiliation:

1. Microelectronics and VLSI Design Group, Department of Electronics and Communication EngineeringNational Institute of Technology SilcharAssam788010India

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2017.0226

Reference28 articles.

1. Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

2. Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers

3. High-speed and low-noise AlInN/GaN HEMTs on SiC

4. A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier

5. Low-Noise Microwave Performance of 0.1 $\mu$m Gate AlInN/GaN HEMTs on SiC

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