Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT-Reference-Cited by-同舟云学术

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Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

Published:2017-12 Issue: Volume:112 Page:374-382
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Panda D.K.,Lenka T.R.

Funder

TEQIP-II

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Nitride Semiconductors and Their Modern Devices;Gil,2013

2. RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT;Lenka;J. Semicond.,2013

3. Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications;Panda;J. Semicond.,2017

4. Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices;Jena;Int. J. Numer. Model. Electron. Netw. Devices Fields,2016

5. A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications;Jia;Superlattices Microstruct.,2017

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2. Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-12-12

3. Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT;Journal of Electronic Materials;2021-03-30

4. GaN and Ga2O3-based wide bandgap semiconductor devices for emerging nanoelectronics;CSI Transactions on ICT;2020-05-28

5. Analysis of microwave noise in an enhancement-mode dual-quantum-well InAs HEMT;Journal of Computational Electronics;2019-06-27

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