GaN HEMT Noise Model Based on Electromagnetic Simulations

Author:

Nalli Andrea,Raffo Antonio,Crupi Giovanni,D'Angelo Sara,Resca Davide,Scappaviva Francesco,Salvo Giuseppe,Caddemi Alina,Vannini Giorgio

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 60 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Inductive Source Degeneration in 40-nm GaN HEMTs for Operation Above 100 GHz;IEEE Transactions on Microwave Theory and Techniques;2024-01

2. Optimization of Behavioral Model of VO2 Switches Using Slime Mould Algorithm;2023 International Symposium on Networks, Computers and Communications (ISNCC);2023-10-23

3. A Scalable Knowledge-Based Neural Network Model for GaN HEMTs With Accurate Trapping and Self-Heating Effects Characterization;IEEE Transactions on Microwave Theory and Techniques;2023-09

4. Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-07-30

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