An improved empirical large-signal model for the GaAs- and GaN-based HEMTs
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/mmce.20523/fullpdf
Reference18 articles.
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2. A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects;Yuk;IEEE Trans Microwave Theory Tech,2009
3. A MESFET model for use in the design of GaAs integrated circuit;Curtice;IEEE Trans Microwave Theory Tech,1980
4. Electrothermal large-signal model of III-V FETs including frequency dispersion and charge conservation;Liu;IEEE Trans Microwave Theory Tech,2009
5. Modeling MESFET's for intermodulation analysis of mixers and amplifiers;Maas;IEEE Trans Microwave Theory Tech,1990
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1. Large-signal distributed millimeter-wave multifinger pHEMT modeling using time-domain technique;International Journal of RF and Microwave Computer-Aided Engineering;2017-05-12
2. Evaluating substrate's effect on RF switch performance via Verilog-A GaN HEMT model;Microelectronics Journal;2017-04
3. Neural modeling approach for trapping and thermal effects on AlGan/Gan HEMT;Microwave and Optical Technology Letters;2017-03-27
4. Neuro-space mapping modeling approach for trapping and self-heating effects on GaAs and GaN devices;International Journal of RF and Microwave Computer-Aided Engineering;2017-03-10
5. The large world of FET small-signal equivalent circuits (invited paper);International Journal of RF and Microwave Computer-Aided Engineering;2016-08-17
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