Neural modeling approach for trapping and thermal effects on AlGan/Gan HEMT-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Neural modeling approach for trapping and thermal effects on AlGan/Gan HEMT

Published:2017-03-27 Issue:5 Volume:59 Page:1140-1142
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Elhamadi Taj-Eddin¹,Boussouis Mohamed¹,Touhami Naima Amar¹,Lamsalli Mohammed¹

Affiliation:

1. Information system and Telecommunication Laboratory, Faculty of Science; Abdmalak Essaadi University; Tetouan Morocco

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. A new empirical nonlinear model for HEMT and MESFET devices;Angelov;IEEE Trans Microwave Theory Tech,1992

2. Analytical nonlinear HEMT model for large signal circuit simulation;Tanimoto;IEEE Trans Microwave Theory Tech,1996

3. An improved empirical large-signal model for the GaAs and GaN based HEMTs;Liu;Int J RF Microwave Comput-Aid Eng,2011

4. Nonlinear modeling of trapping and thermal effects on GaAs and GaN MESFET/HEMT devices;Chaibi;Prog Electromagn Res,2012

5. Artificial neural networks for RF and microwave design from theory to practice;Zhang;IEEE Trans Microwave Theory Tech,2003

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP