Neuro-space mapping modeling approach for trapping and self-heating effects on GaAs and GaN devices

Author:

Elhamadi Taj-eddin1ORCID,Boussouis Mohamed1,Touhami Naima Amar1,Lamsalli Mohammed1

Affiliation:

1. Information system and Telecommunication Laboratory; Faculty of Science, Abdelmalek Essaadi University; Tetouan Morocco

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference28 articles.

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3. An improved empirical large-signal model for the GaAs and GaN based HEMTs;Liu;Int J RF Microwave Comput Aided Eng.,2011

4. Angelov I Desmaris V Dynefors K Nilsson PA Rorsman N Zirath H. 2005 309 312

5. Empowering GaN HEMT models: The gateway for power amplifier design;Crupi;Int J Numer Model Electron Networks Devices Fields,2015

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