On Neural Networks Based Electrothermal Modeling of GaN Devices

Author:

Jarndal AnwarORCID

Funder

University of Sharjah, Sharjah, United Arab Emirates

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Cited by 40 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. On efficient modeling of drain current for designing high-power GaN HEMT-based circuits;Journal of Computational Electronics;2024-09-09

2. Evaluating Nine Machine Learning Algorithms for GaN HEMT Small Signal Behavioral Modeling through K-fold Cross-Validation;Engineering, Technology & Applied Science Research;2024-08-02

3. Optimized Electrothermal Drain Current Modeling of GaN-Based HEMT;2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT);2024-05-02

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