Evaluating substrate's effect on RF switch performance via Verilog-A GaN HEMT model-Reference-Cited by-同舟云学术

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Evaluating substrate's effect on RF switch performance via Verilog-A GaN HEMT model

Published:2017-04 Issue: Volume:62 Page:43-48
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Majumdar Shubhankar,Biswas Dhrubes

Funder

Ministry of Human Resource Development, Govt. of India

Department of Electronics and Information Technology (DeitY), Govt. of India

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

1. G.J. Coram, How to (and how not to) write a compact model in Verilog-A, in: Proceedings of Behavioral Modeling and Simulation Conference (BMAS 2004), 2004, pp. 97–106.

2. Why- and how- to integrate Verilog-A compact models in spice simulators;Chalkiadaki;Int. J. Circuit Theory Appl.,2012

3. ANALYTICAL method FOR deriving consistent large–small-signal field-effect transistor model;Bousnina;Microw. Opt. Technol. Lett.,2013

4. An improved empirical large-signal model for the GaAs- and GaN-based HEMTs;Liu;Int. J. RF Microw. Comput. Eng.,2011

5. , Identification technique of FET model based on vector nonlinear measurements;Avolio;Electron. Lett.,2011

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT;Semiconductor Science and Technology;2024-06-06

2. A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer;Micromachines;2024-03-13

3. Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate;Microelectronics Reliability;2017-11

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