Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate-Reference-Cited by-同舟云学术

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Published:2019-05-08 Issue:8 Volume:13 Page:1900167
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Zhang Yachao¹,Su Kai¹,Guo Rui¹,Xu Shengrui¹,Chen Dazheng¹,Zhu Jiaduo¹,Bao Weimin²,Zhang Jincheng¹,Ning Jing¹,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologySchool of MicroelectronicsXidian UniversityNo.2 South TaiBai RoadXi'an710071China

2. School of Aerospace Science and TechnologyXidian UniversityNo.2 South TaiBai RoadXi'an710071China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900167

Reference29 articles.

1. High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

2. Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

3. Microstructural defects in GaN thin films grown on chemically vapor-deposited graphene layers

4. Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes

5. Stress relaxation of GaN microstructures on a graphene-buffered Al2O3substrate

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