Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures-Reference-Cited by-同舟云学术

Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Published:2015-09-30 Issue:10 Volume:9 Page:575-579
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Polyakov Alexander Y.¹,Yun Jin-Hyeon²,Ahn Haeng-Keun²,Usikov Alexander S.³⁴,Yakimov Eugene B.¹⁵,Tarelkin Sergey A.¹⁶,Smirnov Nikolai B.¹,Shcherbachev Kirill D.¹,Helava Heikki³,Makarov Yuri N.³,Kurin Sergey Yu⁷,Didenko Sergey I.¹,Papchenko Boris P.⁴,Lee In-Hwan²

Affiliation:

1. National University of Science and Technology MISiS; Moscow Russia

2. School of Advanced Materials Engineering, Chonbuk National University; Jeonju 561-756 Korea

3. Nitride Crystals, Inc.; Deer Park USA

4. University ITMO; 49 Kronverkskiy Ave. Saint Petersburg 197101 Russia

5. Institute of Microelectronics Technology and High Purity Materials Russian Academy of Science; Chernogolovka Russia

6. Technological Institute for Superhard and Novel Carbon Materials; 7 Centralnaya St. Troitsk, Moscow 142190 Russia

7. Nitride Crystals Ltd.; pr. Engels 27 Saint Petersburg 194156 Russia

Funder

Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST ”MISiS”

National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT &Future Planning

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201510315/fullpdf

Reference32 articles.

1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

2. III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz

3. 284–300 nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates

4. Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)

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