High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon-Reference-Cited by-同舟云学术

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High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

Published:2010-12-02 Issue:1 Volume:5 Page:37-39
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Arulkumaran S.,Vicknesh S.,Ng G. I.,Liu Z. H.,Selvaraj S. L.,Egawa T.

Funder

Defence Research and Technology (DRTech), Singapore

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201004465/fullpdf

Reference13 articles.

1. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

2. The 1.6-kV AlGaN/GaN HFETs

3. 20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

4. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Stress Voltage and Temperature on the Reliability of AlGaN/GaN HEMTs for RF and Microwave Application;physica status solidi (a);2023-12-07

2. Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates;Japanese Journal of Applied Physics;2023-10-09

3. Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors;physica status solidi (a);2023-06-19

4. 氮掺杂单层石墨烯上无中间层沉积高质量氮化镓;Science China Materials;2023-02-01

5. Growth and characterization of nitrogen-polar AlGaN/AlN and demonstration of field effect transistor;Japanese Journal of Applied Physics;2022-11-14

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