Scaling the Equivalent Oxide Thickness by Employing a TiO 2 Thin Film on a ZrO 2 –Al 2 O 3 ‐Based Dielectric for Further Scaling of Dynamic Random Access Memory-Reference-Cited by-同舟云学术

Scaling the Equivalent Oxide Thickness by Employing a TiO 2 Thin Film on a ZrO 2 –Al 2 O 3 ‐Based Dielectric for Further Scaling of Dynamic Random Access Memory

Published:2019-07-22 Issue:10 Volume:13 Page:1900282
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Cha Soon Hyung¹,An Cheol Hyun¹,Cho Seong Tak¹,Kim Dong-Gun¹,Kwon Dae Seon¹,Lim Jun Il¹,Jeon Woojin²^ORCID,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research CenterSeoul National University Seoul 08826 Republic of Korea

2. Department of Advanced Materials Engineering for Information and ElectronicsKyung Hee University Yongin 17104 Republic of Korea

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900282

Reference27 articles.

1. Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

2. Nanotubular metal–insulator–metal capacitor arrays for energy storage

3. Nanostructured materials for advanced energy conversion and storage devices

4. Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films

5. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

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