Dopant profiling in silicon nanowires measured by scanning capacitance microscopy-Reference-Cited by-同舟云学术

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Dopant profiling in silicon nanowires measured by scanning capacitance microscopy

Published:2014-03-17 Issue:4 Volume:8 Page:312-316
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Bassani Franck,Periwal Priyanka,Salem Bassem,Chevalier Nicolas,Mariolle Denis,Audoit Guillaume,Gentile Pascal,Baron Thierry

Funder

French National Research Agency (ANR) through the “Nahdevi” project and Grenoble Innovation Recherche

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201409041/fullpdf

Reference24 articles.

1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

2. High Performance Silicon Nanowire Field Effect Transistors

3. Ge/Si nanowire heterostructures as high-performance field-effect transistors

4. Vertically integrated silicon-germanium nanowire field-effect transistor

5. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

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1. Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide;Ultramicroscopy;2023-12

2. Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors;IEEE Electron Device Letters;2019-05

3. Surface electrical characterization of defect related inhomogeneities of AlGaN/GaN/Si heterostructures using scanning capacitance microscopy;Materials Science in Semiconductor Processing;2019-05

4. Mapping Free-Carriers in Multijunction Silicon Nanowires Using Infrared Near-Field Optical Microscopy;Nano Letters;2017-10-30

5. Dual-gate operation and carrier transport in SiGe p–n junction nanowires;Nanotechnology;2017-10-23

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