Vertically integrated silicon-germanium nanowire field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3660244
Reference24 articles.
1. Applications of Silicon?Germanium Heterostructure Devices
2. Reduced carrier backscattering in heterojunction SiGe nanowire channels
3. Realization of dual-gated Ge–SixGe1−x core-shell nanowire field effect transistors with highly doped source and drain
4. Nanowire electronic and optoelectronic devices
5. Infrared Photodetectors in Heterostructure Nanowires
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