Surface electrical characterization of defect related inhomogeneities of AlGaN/GaN/Si heterostructures using scanning capacitance microscopy-Reference-Cited by-同舟云学术

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Surface electrical characterization of defect related inhomogeneities of AlGaN/GaN/Si heterostructures using scanning capacitance microscopy

Published:2019-05 Issue: Volume:94 Page:57-63
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Szyszka Adam,Wośko Mateusz,Paszkiewicz Bogdan,Paszkiewicz Regina

Funder

National Centre for Research and Development

National Science Centre

Wroclaw University of Technology

Slovak–Polish International Cooperation Program

European Regional Development Fund

Applied Research Program

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. GaN electronics for high power, high temperature applications;Pearton;Mater. Sci. Eng. B,2001

2. Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process;Lee;Appl. Phys. Express,2016

3. On the origin of a-type threading dislocations in GaN layers;Kwon;J. Vac. Sci. Technol. A,2005

4. Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride;Simpkins;J. Appl. Phys.,2003

5. Nonradiative recombination at threading dislocations in n-type GaN: studied by cathodoluminescence and defect selective etching;Albrecht;Appl. Phys. Lett.,2008

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1. Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN -on- Si Heterostructures and p - n Diodes by Multiple Microscopy Techniques;Physical Review Applied;2023-03-24

2. Scanning Probe Microscopy nanoscale electrical characterization of AlGaN/GaN grown on structured GaN templates;Solid-State Electronics;2022-07

3. Comparison of the electronic, optical and photocatalytic properties of MoSe2, InN, and MoSe2/InN heterostructure nanosheet-A first-principle study;Materials Science in Semiconductor Processing;2021-08

4. Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures;Applied Surface Science;2021-02

5. Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices;RSC Advances;2020

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