Dual-gate operation and carrier transport in SiGe p–n junction nanowires
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/aa9173/pdf
Reference19 articles.
1. A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
2. A 0.8 THz $f_{\rm MAX}$ SiGe HBT Operating at 4.3 K
3. Realization of a Linear Germanium Nanowire p−n Junction
4. Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires
5. In Situ Axially Doped n-Channel Silicon Nanowire Field-Effect Transistors
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1. Plastic recovery and self-healing in longitudinally twinned SiGe nanowires;Nanoscale;2019
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