Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3457862
Reference25 articles.
1. High Performance Silicon Nanowire Field Effect Transistors
2. Axial p-n Junctions Realized in Silicon Nanowires by Ion Implantation
3. Strain distributions and electronic property modifications in Si/Ge axial nanowire heterostructures
4. Ge/Si nanowire heterostructures as high-performance field-effect transistors
5. Vertical Epitaxial Wire-on-Wire Growth of Ge/Si on Si(100) Substrate
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