Electrical Properties of ZrO2 /Al2 O3 /ZrO2 -Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials-Reference-Cited by-同舟云学术

Electrical Properties of ZrO2 /Al2 O3 /ZrO2 -Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials

Published:2018-08-24 Issue:10 Volume:12 Page:1800356
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Lee Woongkyu¹²,An Cheol Hyun¹,Yoo Sijung¹,Jeon Woojin¹³,Chung Min Jung¹,Kim Sang Hyeon¹,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center; Seoul National University; Seoul 08826 Republic of Korea

2. Department of Materials Science and Engineering; Northwestern University; Evanston Illinois 60208 United States

3. Department of Materials Science and Engineering; Dankook University; Cheonan Chungnam 31118 Republic of Korea

Funder

Future Semiconductor Device Technology Development Program

MOTIE (Ministry of Trade, Industry, & Energy) and KSRC (Korea Semiconductor Research Consortium) (Republic of Korea)

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201800356/fullpdf

Reference23 articles.

1. Rapid thermal chemical vapor deposition of zirconium oxide for metal-oxide-semiconductor field effect transistor application

2. Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon

3. Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo Electrodes

4. Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries

5. Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor

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